发明名称 SEMICONDUCTOR DEVICE
摘要 In a semiconductor device connected to a mutual-inductive load, a voltage dividing diode is provided in series to an ST-MOS circuit so that an anode thereof is connected to a GND terminal and a cathode thereof is connected to the back gate of each of lateral nMOSFETs forming the ST-MOS circuit. This can inhibit parasitic transistors in the lateral nMOSFETs from malfunctioning to enable the voltage at an ST terminal to be reliably maintained at a normal voltage.
申请公布号 US2015061627(A1) 申请公布日期 2015.03.05
申请号 US201414450472 申请日期 2014.08.04
申请人 FUJI ELECTRIC CO., LTD. 发明人 IWATA Hideki
分类号 G05F3/20;H01L29/861 主分类号 G05F3/20
代理机构 代理人
主权项 1. A semiconductor device comprising: an output stage switching element configured to control a current in a load having a mutual inductance; a detection circuit configured to detect an abnormality of the output stage switching element; a logic circuit configured to make a determination with respect to a state of the output stage switching element using the output of the detection circuit; a status detection circuit configured to output a status of a connection between the load and the output stage switching element and a result of the determination made by the logic circuit to a state outputting terminal; and a voltage dividing diode connected in series to the status detection circuit, a cathode of the voltage dividing diode being connected to the status detection circuit, and an anode of the voltage dividing diode being connected to a ground.
地址 Kawasaki-shi JP