Strained Channel Dynamic Random Access Memory Devices

摘要

DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.

主权项

1. A structure comprising:
a substrate having a first region and a second region; a graded layer on the substrate in the first region; a relaxed layer on the graded layer; a strained layer on the relaxed layer, a recess being in the strained layer and the relaxed layer in the first region; and a capacitor defined in the recess, the capacitor comprising a first conductive plate along a sidewall of the recess, an insulating material on the first conductive plate, and a second conductive plate on the insulating material.