| 发明名称 |
TRANSISTORS AND FABRICATION METHODS THEREOF |
| 摘要 |
A method is provided for fabricating a transistor. The method includes providing a semiconductor substrate having a first region; and forming a first gate structure on a surface of the semiconductor substrate in the first region. The method also includes forming trenches in the semiconductor substrate at both sides of the first gate structure; and forming a first stress layer with one surface lower than the surface of the semiconductor substrate in the trenches. Further, the method includes forming a second stress layer containing carbon atoms with a surface leveling with or higher than the surface of the semiconductor substrate on the first stress layer; and forming a source region and a drain region in the semiconductor substrate at both sides of the first gate structure. |
| 申请公布号 |
US2015061028(A1) |
申请公布日期 |
2015.03.05 |
| 申请号 |
US201314144696 |
申请日期 |
2013.12.31 |
| 申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING ) CORPORATION ;Semiconductor Manufacturing International (Shanghai) Corporation |
发明人 |
HE YONGGEN |
| 分类号 |
H01L21/8238;H01L27/092 |
主分类号 |
H01L21/8238 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a transistor, comprising:
providing a semiconductor substrate having a first region; forming a first gate structure on a surface the semiconductor substrate in the first region; forming trenches in the semiconductor substrate at both sides of the first gate structure; forming a first stress layer with a top surface lower than the surface semiconductor substrate in the trenches; forming a second stress layer containing carbon atoms with a surface leveling with or higher than the surface of the semiconductor substrate on the first stress layer; and forming a source region and a drain region at both sides of the first gate structure. |
| 地址 |
BEIJING CN |
