TRANSISTORS, METHODS OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICES INCLUDING THE TRANSISTORS

摘要

Provided are transistors, methods of manufacturing the same, and electronic devices including the transistors. A transistor includes a channel layer having a multi-layer structure having first and second layers, the first and second semiconductor layers including a plurality of elements having respective concentrations, and the first layer is disposed closer to a gate than the second layer. The second layer has a higher electrical resistance than the first layer as a result of a combination of the elements and of their respective concentrations. At least one of the first and second layers includes a semiconductor material including zinc, oxygen, and nitrogen. One of the first and second layers includes a semiconductor material including zinc fluoronitride. An oxygen content of the second layer is higher than an oxygen content of the first layer. A fluorine content of the second layer is higher than a fluorine content of the first layer.

主权项

1. A transistor comprising:
a channel layer having a multi-layer structure; a source and a drain respectively contacting first and second regions of the channel layer; a gate corresponding to the channel layer; and a gate insulating layer disposed between the channel layer and the gate, wherein the channel layer comprises first and second layers, wherein the first layer is disposed closer to the gate than the second layer, wherein the first and second layers comprise a semiconductor material comprising zinc, oxygen, and nitrogen; and wherein the second layer has an electrical resistance that is higher than an electrical resistance of the first layer.