| 摘要 |
<p>An etching method for high haze fluorine-doped tin oxide film is disclosed. According to the present invention, the method includes the steps of authorizing predetermined voltage to a first electrode formed on an area of a fluorine-doped tin oxide film, and a second electrode formed on an area of an etching container in which etching solution is contained; deep-coating of the fluorine-doped tin oxide film to the etching solution at predetermined speed by using a deep coater; and etching the fluorine-doped tin oxide film through deep coating. The predetermined voltage is set to have 0~20[%] of change in sheet resistance of the fluorine-doped tin oxide film before etching compared to that of the fluorine-doped tin oxide film after etching.</p> |
