| 发明名称 |
SEMICONDUCTOR STORAGE DEVICE AND MEMORY SYSTEM |
| 摘要 |
A semiconductor storage device according to the present embodiment comprises a memory cell array including a plurality of memory cells. An output part is configured to output data based on a strobe signal. An error correction part is configured to correct an error in first data read from the memory cell array. The output part fixes level of the strobe signal when outputting the first data, if the number of error bits of the first data exceeds a first number, he error correction part being capable of correcting error of the first number in the first data. |
| 申请公布号 |
US2015067444(A1) |
申请公布日期 |
2015.03.05 |
| 申请号 |
US201414203473 |
申请日期 |
2014.03.10 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
EGUCHI Yasuyuki;KASHIWAGI Jin |
| 分类号 |
G06F11/10;H03M13/05 |
主分类号 |
G06F11/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor storage device comprising:
a memory cell array including a plurality of memory cells; an output part configured to output data based on a strobe signal; and an error correction part configured to correct an error in first data read from the memory cell array, wherein the output part fixes level of the strobe signal when outputting the first data, if number of error bits of the first data exceeds a first number, the error correction part being capable of correcting error of the first number in the first data. |
| 地址 |
Tokyo JP |
