发明名称 Semiconductor Dies Having Opposing Sides with Different Reflectivity
摘要 A method of processing semiconductor dies is provided. Each semiconductor die has a first side with one or more terminals, a second side opposite the first side and sidewalls extending between the first and the second sides. The semiconductor dies are processed by placing the semiconductor dies on a support substrate so that the first side of each semiconductor die faces the support substrate and the second side faces away from the support substrate. A coating is applied to the semiconductor dies placed on the support substrate. The coating has a lower reflectivity than the first side of the semiconductor dies. The coating covers the second side and at least a region of the sidewalls nearest the second side of each semiconductor die. The semiconductor dies are removed from the support substrate after applying the coating for further processing as loose dies such as taping.
申请公布号 US2015061113(A1) 申请公布日期 2015.03.05
申请号 US201314015353 申请日期 2013.08.30
申请人 Infineon Technologies AG 发明人 Vaupel Mathias;Ruhl Günther
分类号 H01L23/48;H01L21/66;H01L21/673;H01L21/56 主分类号 H01L23/48
代理机构 代理人
主权项 1. A method of processing semiconductor dies each having a first side with one or more terminals, a second side opposite the first side and sidewalls extending between the first and the second sides, the method comprising: placing the semiconductor dies on a support substrate so that the first side of each semiconductor die faces the support substrate and the second side faces away from the support substrate; applying a coating to the semiconductor dies placed on the support substrate, the coating having a lower reflectivity than the first side of the semiconductor dies and covering the second side and at least a region of the sidewalls nearest the second side of each semiconductor die; and removing the semiconductor dies from the support substrate after applying the coating.
地址 Neubiberg DE