| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device includes: a drift layer having a first conductive type; a first semiconductor layer having a second conductive type and arranged in a surface portion of the drift layer; a second semiconductor layer having the first conductive type, arranged at a position of the drift layer spaced apart from the first semiconductor layer, and having a carrier density larger than the drift layer; a hole injection layer having the second conductive type and arranged selectively in the second semiconductor layer; a first electrode electrically connecting to the first semiconductor layer; a second electrode electrically connecting to the second semiconductor layer and the hole injection layer. The second semiconductor layer has a carrier density smaller than a spatial charge density. |
| 申请公布号 |
US2015061090(A1) |
申请公布日期 |
2015.03.05 |
| 申请号 |
US201314386099 |
申请日期 |
2013.04.17 |
| 申请人 |
DENSO CORPORATION |
发明人 |
Oyama Kazuhiro |
| 分类号 |
H01L29/868;H01L29/10 |
主分类号 |
H01L29/868 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a drift layer having a first conductive type; a first semiconductor layer having a second conductive type and arranged in a surface portion of the drift layer; a second semiconductor layer having the first conductive type, arranged at a position of the drift layer spaced apart from the first semiconductor layer, and having a carrier density larger than the drift layer; a hole injection layer having the second conductive type and arranged selectively in the second semiconductor layer; a first electrode electrically connecting to the first semiconductor layer; a second electrode electrically connecting to the second semiconductor layer and the hole injection layer, wherein the second semiconductor layer has a carrier density smaller than a spatial charge density. |
| 地址 |
Kariya-city, Aichi-pref. JP |
