| 发明名称 |
SEMICONDUCTOR STRUCTURE INCLUDING METAL SILICIDE BUFFER LAYERS AND METHODS OF FABRICATING THE SAME |
| 摘要 |
Provided are semiconductor structures and methods of fabricating the same. The semiconductor structure includes a silicon substrate, at least one semiconductor layer that is grown on the silicon substrate and has a lattice constant in a range from about 1.03 to about 1.09 times greater than that of the silicon substrate, and a buffer layer that is disposed between the silicon substrate and the semiconductor layer and includes a metal silicide compound for lattice matching with the semiconductor layer. Related fabrication methods are also discussed. |
| 申请公布号 |
US2015061030(A1) |
申请公布日期 |
2015.03.05 |
| 申请号 |
US201414471900 |
申请日期 |
2014.08.28 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Uddin Mohammad Rakib;Yang Moon-seung;Lee Dong-soo;Lee Myoung-jae;Cho Seong-ho;Hwang Eui-chul |
| 分类号 |
H01L29/04;H01L27/092;H01L29/16;H01L29/06;H01L29/20 |
主分类号 |
H01L29/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor structure comprising:
a silicon substrate; at least one semiconductor layer that is formed on the silicon substrate and has a lattice constant in a range from about 1.03 to about 1.09 times greater than that of the silicon substrate; and a buffer layer that is disposed between the silicon substrate and the semiconductor layer and comprises a metal silicide compound providing lattice matching with the semiconductor layer. |
| 地址 |
Gyeonggi-do KR |
