METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

Embodiments of the present invention provide methods of fabricating features of a semiconductor device array, the method including patterning a dielectric layer deposited on a conductive carrier, wherein patterning comprises forming a trench pattern defining at least one device contact, electrodepositing metal into the patterned trenches, transferring the dielectric layer and the electrodeposited metal to a substrate and removing the conductive carrier, and the method further comprising lithographically fabricating one or more further features of the semiconductor device array overlying the dielectric layer and electrodeposited metal.

主权项

1. A method of fabricating features of a semiconductor device, the method comprising:
patterning a dielectric layer deposited on a conductive carrier, wherein patterning comprises forming a trench pattern defining at least one device contact; electrodepositing metal into the patterned trenches; transferring the dielectric layer and the electrodeposited metal to a substrate and removing the conductive carrier; and the method further comprising: lithographically fabricating one or more further features of the semiconductor device overlying the dielectric layer and electrodeposited metal.