发明名称 |
DNA SEQUENCING USING A SUSPENDED CARBON NANOTUBE |
摘要 |
A technique is provided for forming a nanodevice for sequencing. A bottom metal contact is disposed at a location in an insulator that is on a substrate. A nonconducting material is disposed on top of the bottom metal contact and the insulator. A carbon nanotube is disposed on top of the nonconducting material. Top metal contacts are disposed on top of the carbon nanotube at the location of the bottom metal contact, where the top metal contacts are formed at opposing ends of the carbon nanotube at the location. The carbon nanotube is suspended over the bottom metal contact at the location, by etching away the nonconducting material under the carbon nanotube to expose the bottom metal contact as a bottom of a trench, while leaving the nonconducting material immediately under the top metal contacts as walls of the trench. |
申请公布号 |
US2015060283(A1) |
申请公布日期 |
2015.03.05 |
申请号 |
US201314037874 |
申请日期 |
2013.09.26 |
申请人 |
International Business Machines Corporation |
发明人 |
Afzali-Ardakani Ali;Franklin Aaron D.;Tulevski George S. |
分类号 |
G01N27/447 |
主分类号 |
G01N27/447 |
代理机构 |
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代理人 |
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主权项 |
1. A device for sequencing, the device comprising:
a bottom metal contact formed at a location in an insulator that is on a substrate; a nonconducting material disposed on top of the bottom metal contact and the insulator; a carbon nanotube disposed on top of the nonconducting material; and top metal contacts disposed on top of the carbon nanotube at the location of the bottom metal contact, wherein the top metal contacts are formed at opposing ends of the carbon nanotube at the location; and wherein the carbon nanotube is suspended over the bottom metal contact at the location, based on etching away the nonconducting material under the carbon nanotube to expose the bottom metal contact as a bottom of a trench, while leaving the nonconducting material immediately under the top metal contacts as walls of the trench. |
地址 |
Armonk NY US |