发明名称 |
PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS |
摘要 |
<p>Disclosed is a plasma processing method including: growing a polycrystalline silicon layer on a processing target base body; and exposing the polycrystalline silicon layer to hydrogen radicals by supplying a processing gas containing hydrogen into a processing container that accommodates the processing target base body including the polycrystalline silicon layer grown thereon and radiating microwaves within the processing container to generate the hydrogen radicals.</p> |
申请公布号 |
KR20150023504(A) |
申请公布日期 |
2015.03.05 |
申请号 |
KR20147036571 |
申请日期 |
2013.04.17 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KATAYAMA DAISUKE;HONDA MINORU;NAKANISHI TOSHIO |
分类号 |
H01L21/02;H01L21/223 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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