METHOD FOR MAKING LIGHT EMITTING DIODE

摘要

A method for making light emitting diode, the method includes the following steps. A substrate having an epitaxial growth surface is provided. A carbon nanotube layer is suspended above the epitaxial growth surface. A first semiconductor layer, an active layer and a second semiconductor layer are grown on the epitaxial growth surface in that order. A third semiconductor layer is formed on a surface of the second semiconductor layer, wherein the third semiconductor layer includes a plurality of spaced protrusions. A portion of the first semiconductor layer is exposed by etching a portion of the third semiconductor layer, the second semiconductor layer, and the active layer. A first electrode is formed to electrically connected to the first semiconductor layer and a second electrode is formed to electrically connected to the second semiconductor layer.

主权项

1. A method for making a light emitting diode, the method comprising:
providing a substrate having an epitaxial growth surface; suspending a first carbon nanotube layer above the epitaxial growth surface; growing a first semiconductor layer, an active layer, and a second semiconductor layer on the epitaxial growth surface in that order; forming a third semiconductor layer on a surface of the second semiconductor layer, wherein the third semiconductor layer comprises a plurality of spaced protrusions; exposing a portion of the first semiconductor layer by etching a portion of the third semiconductor layer, the second semiconductor layer, and the active layer; and applying a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer.