发明名称 |
INTERCONNECT STRUCTURES AND METHODS OF FORMING SAME |
摘要 |
A semiconductor device, an interconnect structure, and methods of forming the same are disclosed. An embodiment is a method of forming a semiconductor device, the method including forming a first dielectric layer over a substrate, forming a first conductive layer in the first dielectric layer, and removing a first portion of the first conductive layer to form at least two conductive lines in the first dielectric layer, the at least two conductive lines being separated by a first spacing. The method further includes forming a capping layer on the at least two conductive lines, and forming an etch stop layer on the capping layer and the first dielectric layer. |
申请公布号 |
US2015061141(A1) |
申请公布日期 |
2015.03.05 |
申请号 |
US201314019276 |
申请日期 |
2013.09.05 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Tung Szu-Ping;Huang Huang-Yi;Liu Wen-Jiun;Hsieh Ching-Hua;Tsai Minghsing |
分类号 |
H01L21/768;H01L23/522 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a semiconductor device, the method comprising:
forming a first dielectric layer over a substrate; forming a first conductive layer in the first dielectric layer; removing a first portion of the first conductive layer to form at least two conductive lines in the first dielectric layer, the at least two conductive lines being separated by a first spacing; forming a capping layer on the at least two conductive lines; and forming an etch stop layer on the capping layer and the first dielectric layer. |
地址 |
Hsin-Chu TW |