| 发明名称 |
Magnetic Tunnel Junction Device |
| 摘要 |
A method includes creating an opening in a dielectric layer that is disposed over a bottom electrode layer. A top electrode layer is disposed over the dielectric layer. A magnetic tunnel junction (MTJ) layer is formed in the opening over the bottom electrode layer. |
| 申请公布号 |
US2015061051(A1) |
申请公布日期 |
2015.03.05 |
| 申请号 |
US201314013943 |
申请日期 |
2013.08.29 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Huang Wei-Hang;Hsu Chern-Yow;Liu Shih-Chang;Tsai Chia-Shiung |
| 分类号 |
H01L43/02;H01L43/12 |
主分类号 |
H01L43/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
creating a first opening in a first dielectric layer that is disposed over a bottom electrode layer, wherein a first top electrode layer is disposed over the first dielectric layer; and forming a magnetic tunnel junction (MTJ) layer in the first opening over the bottom electrode layer. |
| 地址 |
Hsin-Chu TW |
