| 发明名称 |
Source and Drain Stressors with Recessed Top Surfaces |
| 摘要 |
An integrated circuit structure includes a gate stack over a semiconductor substrate, and a silicon germanium region extending into the semiconductor substrate and adjacent to the gate stack. The silicon germanium region has a top surface, with a center portion of the top surface recessed from edge portions of the top surface to form a recess. The edge portions are on opposite sides of the center portion. |
| 申请公布号 |
US2015061024(A1) |
申请公布日期 |
2015.03.05 |
| 申请号 |
US201314017062 |
申请日期 |
2013.09.03 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Li Kun-Mu;Kwok Tsz-Mei;Sung Hsueh-Chang;Li Chii-Horng;Lee Tze-Liang |
| 分类号 |
H01L27/088;H01L21/02 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated circuit structure comprising:
a semiconductor substrate; a first gate stack over the semiconductor substrate; and a first silicon germanium region extending into the semiconductor substrate and adjacent to the first gate stack, wherein the first silicon germanium region comprises a first top surface, with a center portion of the first top surface recessed from edge portions of the first top surface to form a recess, and wherein the edge portions are on opposite sides of the center portion. |
| 地址 |
Hsin-Chu TW |
