| 摘要 |
Provided is a semiconductor device by which it is possible to mitigate fatigue failure and mitigate interface reaction failure even in a high temperature environment of 175°C or higher, a method for manufacturing the same, and a solder therefor. A semiconductor device manufactured by bonding, onto a base (7), a ceramic substrate (5) on which power semiconductor elements (1, 2) are mounted, or by bonding a power semiconductor element (31) onto a lead frame (9), wherein the ceramic substrate (5) is bonded to the base (7), or the power semiconductor element (31) is bonded to the lead frame (9) using solder (30) comprising Sn, 0-3.5 mass% Ag, 3-10 mass% Cu, 1-4 mass% Bi. |
