发明名称 Process for Manufacturing a Solar Cell and Solar Cell
摘要 A solar cell segment includes a substrate defining a rear side including a number of base doped regions and emitter doped regions. A dielectric layer and at least one metallizing layer are disposed on the rear side of the substrate. The at least one metallizing layer is structured in an interdigital comb-shaped contact deck arrangement and defines base contact decks for a number of base doped regions and emitter contact decks for a number of base doped regions. The at least one metallization layer is disposed between the rear side of the substrate and the dielectric layer. At least one first row of first contact openings is formed in the dielectric layer lying in a region of the base contact decks and at least one second row of second contact openings is formed in the dielectric layer lying in a region of the emitter contact decks.
申请公布号 US2015059822(A1) 申请公布日期 2015.03.05
申请号 US201414473043 申请日期 2014.08.29
申请人 SolarWorld Industries Thueringen GmbH 发明人 Krokoszinski Hans-Joachim
分类号 H01L31/0224;H01L31/05;H01L31/18 主分类号 H01L31/0224
代理机构 代理人
主权项 1. A process for manufacturing at least one solar cell segment comprising: making at least one first row of first contact openings in a dielectric layer on a substrate, the substrate having a rear side with a number of base doped regions and a number of emitter doped regions, the dielectric layer and at least one metallizing layer being disposed on the rear side of the substrate, the at least one metallizing layer (i) being structured into an interdigital comb shaped contact deck arrangement defining base contact decks for the number of base doped regions and emitter contact decks for the number of emitter doped regions, and (ii) being disposed between the rear side of the substrate and the dielectric layer, the at least one first row of first contact openings being made in the dielectric layer in a region of the base contact decks, wherein the at least one first row is oriented linear and transverse to a direction of longitudinal extension of the base contact decks and includes a first contact opening per base contact deck; and making at least one second row of second contact openings in the dielectric layer in a region of the emitter contact decks, wherein the at least one second row is oriented linear and transverse to a direction of longitudinal extension of the emitter contact decks and includes a second contact opening per emitter contact deck.
地址 Arnstadt DE