ETCHING METHOD, AND RECORDING MEDIUM

摘要

This etching method has: a transforming step in which a mixed gas is supplied to the surface of a silicon oxide film, and the silicon oxide film is transformed to generate a reaction product; and a heating step in which the reaction product is heated and removed. The transforming step has a first transforming step in which a mixed gas containing a basic gas and a halogen-containing gas is supplied to the surface of the silicon oxide film, and a second transformation step in which the supply of the basic gas is stopped and a mixed gas containing the halogen-containing gas is supplied to the surface of the silicon oxide film.