| 摘要 |
<p>The present invention provides an image sensor including an oxide semiconductor layer formed on a gate electrode, an oxide film formed on a surface of a channel region of the oxide semiconductor layer, source and drain electrodes formed on the oxide semiconductor layer and spaced apart from each other with the channel region interposed therebetween, an anti-etching film formed on the source and drain electrodes and configured to cover the oxide film, and a photodiode connected to the drain electrode.</p> |
