发明名称 封止層被覆半導体素子および半導体装置の製造方法
摘要 <p>A method for producing an encapsulating layer-covered semiconductor element includes a disposing step of disposing a semiconductor element on a support, an encapsulating step of embedding and encapsulating the semiconductor element by an encapsulating layer in an encapsulating sheet including a peeling layer and the encapsulating layer laminated below the peeling layer and made from a thermosetting resin before complete curing, and a heating step of heating and curing the encapsulating layer after the encapsulating step. The heating step includes a first heating step in which the encapsulating sheet is heated under a normal pressure at a first temperature, a peeling step in which the peeling layer is peeled from the encapsulating layer after the first heating step, and a second heating step in which the encapsulating layer is heated at a second temperature that is higher than the first temperature after the peeling step.</p>
申请公布号 JP5680210(B2) 申请公布日期 2015.03.04
申请号 JP20130534089 申请日期 2013.07.17
申请人 日東電工株式会社 发明人 三谷 宗久;江部 悠紀;大薮 恭也;野呂 弘司;河野 広希
分类号 H01L21/56 主分类号 H01L21/56
代理机构 代理人
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