| 摘要 |
1,049,017. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. June 10, 1965 [June 18, 1964], No. 24523/65. Heading H1K. A semi-conductor device comprises a semiconductor body having an oxide layer adhering to and contiguous with a surface of the body, and a vitreous film of a mixture of the oxide of said layer and phosphorus pentoxide formed on said layer and separated by the layer from the body. Such a vitreous film is stated to reduce the current leakage at the interface between the semi-conductor body and the oxide layer. In specific embodiments, a diode, a transistor, an insulated gate field-effect transistor and a voltage asymmetric capacitor are described (Figs. 4, 5, 6 and 7 respectively, not shown), together with graphs showing their operating characteristics. In a diode embodying the invention, Fig. 2, an N-type Si body 10 has a silicon oxide layer 11 formed thereon e.g. by thermal decomposition of triethoxysilane. Successive masking, etching and diffusion steps are used to produce the zone 15 containing B. The phosphosilicate vitreous layer 21 is formed by decomposition of PH 3 , POCl 3 or P 2 O 5 on the silicon oxide surface 11. The phosphorus layer may additionally be covered by a layer of glass produced by sedimentation of a colloidal suspension. Electrodes 17 and 18 and contacts 19 and 20 are subsequently added. An alternative to electrode 18 may be made through 23. In other embodiments based on a P-type silicon body, an inversion layer is formed adjacent the oxide layer. Germanium or an intermetallic semi-conductor material may also be used. |
