<p>A nonlinear memristor includes a bottom electrode, a top electrode, and an insulator layer between the bottom electrode and the top electrode. The insulator layer comprises a metal oxide. The nonlinear memristor further includes a switching channel within the insulator layer, extending from the bottom electrode toward the top electrode, and a nano-cap layer of a metal-insulator-transition material between the switching channel and the top electrode. The top electrode comprises the same metal as the metal in the metal-insulator-transition material.</p>
申请公布号
EP2842163(A1)
申请公布日期
2015.03.04
申请号
EP20120875510
申请日期
2012.04.25
申请人
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
发明人
YANG, JIANHUA;ZHANG, MINXIAN MAX;PICKETT, MATTHEW D.;WILLIAMS, R. STANLEY