| 摘要 |
PROBLEM TO BE SOLVED: To provide a III-V compound semiconductor manufacturing method which can reduce a low quality area on a substrate side.SOLUTION: A III-V compound semiconductor manufacturing method comprises: an intermediate layer formation step of forming an intermediate layer on a surface of a substrate, to which a group III element and/or a group V element which are to compose the III-V compound semiconductor is added to a solid solubility limit; and a semiconductor formation step of forming a III-V compound semiconductor on a surface of the formed intermediate layer. |
