发明名称 多結晶半導体材料、特にシリコンを取得する装置及び該装置内の温度を制御するための方法
摘要 <p>A device for obtaining multicrystalline silicon, including: at least one crucible made of quartz for the silicon, removably housed in a cup-shaped graphite container; a fluid-tight openable casing; a top induction coil, set facing, with interposition of a graphite plate, the crucible, a lateral induction coil, set around a side wall of the graphite container, and a bottom induction coil, set facing a bottom wall of the graphite container and vertically mobile for varying the distance from the bottom wall; and first means for a.c. electrical supply of the induction coils separately from one another, and second means for supply of a coolant within respective hollow turns of the induction coils; the bottom induction coil includes four spiral windings, arranged alongside one another; electrical switching means enable in use selective connection of the four windings to one another according to different configurations.</p>
申请公布号 JP5681197(B2) 申请公布日期 2015.03.04
申请号 JP20120534788 申请日期 2010.10.20
申请人 发明人
分类号 C01B33/02;C30B29/06;H01L51/44 主分类号 C01B33/02
代理机构 代理人
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