| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is constructed so as to suppress the operation of a parasitic bipolar transistor and improve its tolerant capacity, irrespective of the lifetime control of a carrier.SOLUTION: In a region where a diode structure is formed, an ntype impurity region 3, not just a ptype impurity region 2, is partially formed on the reverse side of an ntype drift layer 1. The width of the ptype impurity region 2 is thereby narrowed, resulting in a distance of the ptype impurity region 2 to a point farthest from the boundary with the ntype impurity region 3 being reduced. Therefore, the internal resistance of the ntype drift layer 1 becomes smaller, causing the bias voltage to decrease, thus making it possible to suppress the operation of a parasitic bipolar transistor. Consequently, it is possible to suppress the operation of a parasitic bipolar transistor and improve its tolerant capacity, irrespective of the lifetime control of a carrier. |
