| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce a leakage current in turn-off of a transistor without diminishing a current driving force. <P>SOLUTION: A field effect transistor comprises: a hetero semiconductor region 3 forming hetero junction with an N-type drain region 2 formed on an N-type substrate region 1 and functioning as a source region; a gate electrode 5 formed adjacent to the hetero junction part of the drain region 2 and the hetero semiconductor region 3 via a gate insulation film 4; driving points 9 of a transistor at places where the gate insulation film 4, the hetero semiconductor region 3 and the drain region 2 are in contact with one another; and P-type semiconductor regions 10 each formed on the drain region 2 and around the driving point 9 of the transistor in contact with the driving point 9. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
