| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent wiring that should be left from being etched by a resist film thickness reduction, and prevent wire linewidth variations by suppressing a focus deviation during wire patterning by an exposure machine. <P>SOLUTION: In a scribe line, a region where interlayer insulating films 2, 4 and 6 do not exist on both sides of the scribe line and a surface of a semiconductor substrate 1 is exposed is provided, and the interlayer insulting films 2, 4 and 6 are left at a middle position of the scribe line, namely in a region held between grooves T. This suppresses a film thickness reduction of a resist 21 used as a mask during formation of a third wiring layer 7, in the vicinity of a boundary position between the scribe line and a chip. It is therefore capable of preventing the wire that should be left from being etched by the film thickness reduction of the resist 21, and preventing a focus deviation during patterning of the third wiring layer 7 by an exposure machine, thereby preventing the occurrence of linewidth variations of the third wiring layer 7. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
