发明名称 |
METHODS FOR MANUFACTURING METAL GATES |
摘要 |
Provided are methods for making metal gates suitable for FinFET structures. The methods described herein generally involve forming a high-k dielectric material on a semiconductor substrate; depositing a high-k dielectric cap layer over the high-k dielectric material; depositing a PMOS work function layer having a positive work function value; depositing an NMOS work function layer; depositing an NMOS work function cap layer over the NMOS work function layer; removing at least a portion of the PMOS work function layer or at least a portion of the NMOS work function layer; and depositing a fill layer. Depositing a high-k dielectric cap layer, depositing a PMOS work function layer or depositing a NMOS work function cap layer may comprise atomic layer deposition of TiN, TiSiN, or TiAlN. Either PMOS or NMOS may be deposited first. |
申请公布号 |
EP2842159(A1) |
申请公布日期 |
2015.03.04 |
申请号 |
EP20130781716 |
申请日期 |
2013.04.19 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
LU, XINLIANG;GANGULI, SESHADRI;NOORI, ATIF;MAHAJANI, MAITREYEE;CHEN, SHIH CHUNG;LEI, YU;FU, XINYU;TANG, WEI;GANDIKOTA, SRINIVAS |
分类号 |
H01L21/8238;H01L21/28;H01L21/322;H01L29/49;H01L29/78 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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