| 摘要 |
<p>A high-frequency module (10) includes a semiconductor chip device (20) that is mounted on an external circuit substrate (300) by wire bonding. A switch forming section (101), a power amplifier forming section (102) and a low noise amplifier forming section (103), realized by a group of FETs, which are active elements, are formed in the semiconductor chip device (20). In addition, flat plate electrodes, which form capacitors (121, 122, 123) are formed in the semiconductor chip device (20). Conductor wires (211, 212, 213) that connect the external circuit substrate (300) and the semiconductor chip device 20 function as inductors. Thus, a group of passive elements that includes inductors and capacitors is formed. As a result, a high-frequency module that can be reduced in size while still obtaining the required transmission characteristic can be provided.</p> |
