| 摘要 |
<p>In at least one embodiment, the method is designed to produce an active zone for an optoelectronic semiconductor chip and comprises the following steps: growing a fourth barrier layer (24) based on Alx4Iny4Ga1-x4-y4N where 0≰x4≰0.40 and on average 0<y4≰0.4, wherein the In content increases along a growth direction (z), growing a quantum well layer (20) on the fourth barrier layer (24), wherein the quantum well layer (20) is based on InyGa1-yN where 0.08≰y≰0.35, growing a first barrier layer (21) based on Alx1Iny1Ga1-x1-y1N where 0≰x1≰0.40 and on average 0<y1≰0.4 onto the quantum well layer (20), wherein the In content decreases along the growth direction (z), growing a second barrier layer (22) based on GaN onto the first barrier layer (21), and growing a third barrier layer (23) based on GaN onto the second barrier layer (22), wherein the third barrier layer (23) is grown with the addition of H2 gas.</p> |
