发明名称 Dynamic voltage adjustment for memory
摘要 <p>A power supply voltage for a memory on an integrated circuit is dynamically adjusted during the operating of the memory. The operating of the memory includes powering the memory at a supply voltage. A test memory of the integrated circuit is concurrently powered while operating the memory. The test memory and the memory each include bit cells of a first bit cell configuration type. A voltage level of the supply voltage is adjusted, while operating the memory, based on the testing of the test memory. The voltage level is adjusted with external variations to assume a value that guarantees no failed operation of the memory but also accurately minimizes the supply voltage. The system and method may be implemented with any type of memory. The memory and test memory may be physically implemented either separated or interspersed on the integrated circuit.</p>
申请公布号 KR101498514(B1) 申请公布日期 2015.03.04
申请号 KR20107000648 申请日期 2008.05.28
申请人 发明人
分类号 G11C5/14;G11C29/10 主分类号 G11C5/14
代理机构 代理人
主权项
地址