| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has improved self-inductance reduction performance. <P>SOLUTION: A semiconductor device comprises: a positive electrode material 11 and a negative electrode material 13 arranged at a distance from each other; and a conductive layer (first conductive material 15) having between the positive electrode material 11 and the negative electrode material 13, a parallel part (recess 15a) parallel with a straight line SL linking the positive electrode material 11 and the negative electrode material 13, or a parallel part parallel with a tangent line of a curve linking the positive electrode material and the negative electrode material. By doing this, a part of the conductive layer is arranged at a part where a magnetic flux generated by a principal current concentrates. Accordingly, the magnetic flux is easy to concentrate on the conductive layer and an induction current can be effectively generated. As a result, reduction performance of self inductance occurring in the electrode materials 11, 13 can be improved. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
