| 摘要 |
Provided in the present invention is a method for filling a concave portion of an object to be processed, which can suppress the generation of a cavity regarding filling a concave portion. An object to be processed includes a semiconductor substrate and an insulating film formed on the semiconductor substrate. The concave portion passes through the insulating film to extend to the semiconductor substrate. The method comprises: a process (a) of forming a thin film of a semiconductor material along a wall surface dividing and forming the concave portion; a process (b) of moving the semiconductor material of the thin film toward the bottom of the concave portion, and forming an epitaxial region in accordance with the crystallization of the semiconductor substrate by annealing the object to be processed, as a process of annealing the object to be processed; and a process (c) of etching the thin film. |
