| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To suppress a leak current caused by an etch pit formed on a surface part of an epitaxial layer in a manufacturing step. <P>SOLUTION: A method for manufacturing a diode comprises: a cap layer formation step (S3) of forming a cap layer on a surface of an epitaxial layer; an annealing step (S4) of activating a dopant with the cap layer being formed; a cap layer removal step (S5) of removing the cap layer; a cleaning step (S6) of cleaning the surface of the epitaxial layer using an etching technique; and a bottom smoothening step (S7) of smoothening a bottom of an etch pit formed on a surface part of the epitaxial layer. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
