| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor HEMT which reduces gate leakage current with inhibiting threshold fluctuation. <P>SOLUTION: A semiconductor device comprises a semiconductor layer formed by a nitride-based semiconductor, a gate insulation film provided on the semiconductor layer and a gate electrode provided on the gate insulation film. The gate insulation film includes a first insulation film formed of an oxynitride film and a second insulation film containing at least one of tantalum, hafnium, hafnium aluminium, lanthanum and yttrium. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
