发明名称 低温でプラズマ励起原子膜の成膜によりシリコン酸化膜を成膜する方法
摘要 <p>A method of depositing a silicon oxide film on a resist pattern or etched lines formed on a substrate by plasma enhanced atomic layer deposition (PEALD) includes: providing a substrate on which a resist pattern or etched lines are formed in a PEALD reactor; controlling a temperature of a susceptor on which the substrate is placed at less than 50° C. as a deposition temperature; introducing a silicon-containing precursor and an oxygen-supplying reactant to the PEALD reactor and applying RF power therein in a cycle, while the deposition temperature is controlled substantially or nearly at a constant temperature of less than 50° C., thereby depositing a silicon oxide atomic layer on the resist pattern or etched lines; and repeating the cycle multiple times substantially or nearly at the constant temperature to deposit a silicon oxide atomic film on the resist pattern or etched lines.</p>
申请公布号 JP5679153(B2) 申请公布日期 2015.03.04
申请号 JP20100058415 申请日期 2010.03.15
申请人 发明人
分类号 H01L21/316;C23C16/42;H01L21/31 主分类号 H01L21/316
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