| 摘要 |
<p>A semiconductor memory device is provided. The present invention comprises a data storing unit and a data comparing unit. The data storing unit generates data voltage corresponding to stored data in a read operation. The data comparing unit comprises a first input end which receives the data voltage and a second input end which receives reference voltage. The data comparing unit carries out the operation which compares the voltage level of the first input end with the voltage level of the second input end after connecting the first input end and the second input end. A semiconductor memory device is provided to shorten the determination time of the stored data and to reduce read operation time, thereby increasing the operation speed of the semiconductor memory device.</p> |
