Methods for fabrication of semiconductor structures including interposers with conductive vias, and related structures and devices

摘要

Methods of fabricating semiconductor devices that include interposers include the formation of conductive vias through a material layer on a recoverable substrate. A carrier substrate is bonded over the material layer, and the recoverable substrate is then separated from the material layer to recover the recoverable substrate. A detachable interface may be provided between the material layer and the recoverable substrate to facilitate the separation. Electrical contacts that communicate electrically with the conductive vias may be formed over the material layer on a side thereof opposite the carrier substrate. Semiconductor structures and devices are formed using such methods.

主权项

1. A method of fabricating a semiconductor device including an interposer, comprising:
forming a semiconductor-on-insulator (SeOI) structure comprising a base recoverable substrate, a layer of semiconductor material, and an insulating layer between the base recoverable substrate and the layer of semiconductor material; forming conductive vias extending through the layer of semiconductor material but not the insulating layer of the SeOI structure and forming at least a portion of the interposer to comprise the conductive vias and the layer of semiconductor material; forming the conductive vias to have aspect ratios of about 2.5 or less; bonding a carrier substrate over the layer of semiconductor material on a side thereof opposite the recoverable substrate; separating the recoverable substrate from the layer of semiconductor material to recover the recoverable substrate; and forming electrical contacts over the layer of semiconductor material on a side thereof opposite the carrier substrate, the electrical contacts communicating electrically with the conductive vias.