Fin-like field effect transistor (FinFET) based, metal-semiconductor alloy fuse device and method of manufacturing same

摘要

A fuse device and method for fabricating the fuse device is disclosed. An exemplary fuse device includes a first contact and a second contact coupled with a metal-semiconductor alloy layer, wherein the metal-semiconductor alloy layer extends continuously between the first contact and the second contact. The metal-semiconductor alloy layer is disposed over an epitaxial layer that is disposed over a fin structure of a substrate.

主权项

1. A device comprising:
a semiconductor substrate; a fin structure disposed over the semiconductor substrate, wherein the fin structure includes at least two fins disposed over the semiconductor substrate, wherein the at least two fins includes a first fin and a second fin disposed over and physically contacting the semiconductor substrate; a dielectric isolation feature extending from the first fin to the second fin, wherein the dielectric isolation feature physically contacts the first and second fins; an epitaxial semiconductor feature disposed over each of the at least two fins; a metal-semiconductor alloy feature disposed over the epitaxial semiconductor feature of each of the at least two fins; and a first contact and a second contact coupled with the metal-semiconductor alloy feature, wherein the metal-semiconductor alloy feature extends continuously between the first contact and the second contact.