| 发明名称 |
Semiconductor device and method of manufacturing the same |
| 摘要 |
There are provided a semiconductor device and a method of manufacturing the same. The semiconductor device includes a body layer of a first conductivity type; an active layer of a second conductivity type, contacting an upper portion of the body layer; and a field limiting ring of a first conductivity type, formed in an upper portion of the active layer. |
| 申请公布号 |
US8969959(B2) |
申请公布日期 |
2015.03.03 |
| 申请号 |
US201313795414 |
申请日期 |
2013.03.12 |
| 申请人 |
Samsung Electro-Mechanics Co., Ltd. |
发明人 |
Jang Chang Su |
| 分类号 |
H01L27/088;H01L29/06 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a body layer of a first conductivity type; an active layer of a second conductivity type, contacting an upper portion of the body layer; a field limiting ring of a first conductivity type, formed in an upper portion of the active layer; and an anode layer of a high-concentration second conductivity type, formed in the upper portion of the active layer. |
| 地址 |
Suwon KR |
