Vertical memory devices with quantum-dot charge storage cells

摘要

A memory device includes a substrate, a semiconductor column extending perpendicularly from the substrate and a plurality of spaced-apart charge storage cells disposed along a sidewall of the semiconductor column. Each of the storage cells includes a tunneling insulating layer disposed on the sidewall of the semiconductor column, a polymer layer disposed on the tunneling insulating layer, a plurality of quantum dots disposed on or in the polymer layer and a blocking insulating layer disposed on the polymer layer.

主权项

1. A memory device comprising:
a substrate; a semiconductor column longitudinally extending from the substrate in a first direction perpendicular to the substrate; a plurality of interlayer insulating layers disposed on a sidewall of the semiconductor column and spaced apart along the first direction and having surfaces oriented perpendicular to the semiconductor column; a plurality of charge storage cells disposed on the sidewall of the semiconductor column, respective ones of which are disposed between adjacent ones of the interlayer insulating layers, each of the charge storage cells comprising:
a tunneling insulating layer disposed on and contacting the sidewall of the semiconductor column and separated from the tunneling layer of any other charge storage cell;a polymer layer linearly extending on the tunneling insulating layer in the first direction;a plurality of quantum dots disposed on or in the polymer layer; anda blocking insulating layer disposed on the polymer layer and contacting the surfaces of adjacent ones of the interlayer insulating layers; and a plurality of gate electrodes, respective ones of which are disposed on respective ones of the charge storage cells.