Surface emitting laser device and atomic oscillator

摘要

A surface emitting laser device includes a substrate, a lower reflector, an active layer, an upper reflector, and surface emitting lasers configured to emit light. A second phase adjustment layer, a contact layer, a first phase adjustment layer, and a wavelength adjustment layer are successively layered from the active layer side. The total optical thickness from the active layer side of the second phase adjustment layer to the midsection of the wavelength adjustment layer is approximately (2N+1)×λ/4, where λ represents a wavelength of light, and N represents a positive integer. The optical thickness from the active layer side of the second phase adjustment layer to the midsection of the contact layer is approximately Nλ/2. At least two of the surface emitting lasers have the wavelength adjustment layer arranged at different thicknesses and are configured to emit light with different wavelengths.

主权项

1. A surface emitting laser device comprising:
a lower reflector formed on a substrate; an active layer formed on the lower reflector; an upper reflector formed on the active layer; a plurality of surface emitting lasers configured to emit light; and a second phase adjustment layer, a contact layer, a first phase adjustment layer, and a wavelength adjustment layer that are successively layered from the active layer side and are arranged within the lower reflector, between the lower reflector and the active layer, within the upper reflector, or between the upper reflector and the active layer; wherein a total optical thickness from the active layer side of the second phase adjustment layer to a midsection of the wavelength adjustment layer is arranged to be approximately (2N+1)×λ/4, where λ represents a wavelength of the light emitted by the surface emitting lasers, and N represents a positive integer; wherein an optical thickness from the active layer side of the second phase adjustment layer to a midsection of the contact layer is arranged to be approximately Nλ/2; and wherein the surface emitting lasers include a first surface emitting laser and a second surface emitting laser that have the wavelength adjustment layer arranged at different thicknesses and are configured to emit light with different wavelengths.