| 摘要 |
<p>PURPOSE: A method for patterning of semiconductor device is provided to uniformly form the damascene groove of the minute line-shape of the cell region by using the double patterning. CONSTITUTION: The first mask layer pattern of a plurality of line-shape which is parallel is formed on the etch layer(114) on the semiconductor substrate. The sacrificing layer(140) is formed a plurality of first mask layer patterns into the uniform thickness. The sacrificing layer is left in interval and the second mask layer pattern is formed between the first mask layer pattern so that the first mask layer pattern and the second mask layer pattern alternate. The third mask film pattern including the first pattern covering the part of the sacrificing layer that surrounds both side end point of the first mask layer pattern is formed. The damascene pattern(170C,170P) is formed by etching the sacrificing layer and etch layer.</p> |
