发明名称 Laminated transferable interconnect for microelectronic package
摘要 A package for a plurality of semiconductor devices having: an electrical interconnect structure, comprising: an electrical interconnect structure; and an active device structure, comprising the plurality of semiconductor devices on an active device substrate. The electrical interconnect structure is bonded to the active device structure and the electrical interconnect structure provides electrical interconnection among the semiconductor devices.
申请公布号 US8969176(B2) 申请公布日期 2015.03.03
申请号 US201012959549 申请日期 2010.12.03
申请人 Raytheon Company 发明人 Fillmore Ward G.;Davis William J.
分类号 H01L21/44;H01L21/00;B81C1/00;H01L23/544;H01L21/683 主分类号 H01L21/44
代理机构 Daly, Crowley, Mofford & Durkee, LLP 代理人 Daly, Crowley, Mofford & Durkee, LLP
主权项 1. A package for a plurality of semiconductor devices, comprising: an electrical interconnect structure disposed over the plurality of semiconductor devices; an active device structure bonded to the electrical interconnect structure, the active device structure comprising; a semiconductor substrate, the semiconductor substrate having the plurality of semiconductor devices, the active device structure having a first polymer layer on a portion of a surface thereof; wherein the electrical interconnect structure has a second polymer layer on a surface thereof and wherein the first polymer layer on the active device layer structure is in direct contact with and bonded to the second polymer layer on the electrical interconnect structure to bond the active device structure to the electrical interconnect structure; wherein the electrical interconnect structure has a first portion of an the electrical interconnecting arrangement on a lower surface of the electrical interconnect structure; wherein the electrical interconnect structure has a second portion of the electrical interconnecting arrangement is on an upper surface of the interconnecting structure; wherein the active device structure has a third portion of the electrical interconnecting arrangement; and wherein an electrical via passes between the first portion of the electrical interconnecting arrangement, and the second portion of the electrical interconnecting arrangement to the third portion of the electrical interconnecting arrangement to provide electrical interconnection among the semiconductor devices on the semiconductor substrate.
地址 Waltham MA US