| 发明名称 | Method of fabricating thin film transistor substrate and organic light emitting display device using the same | ||
| 摘要 | A method of fabricating a thin film transistor substrate includes: forming a polymer layer on a glass substrate; forming a passivation layer on the polymer layer; forming a thin film transistor array on the passivation layer; and separating the glass substrate from the polymer layer by irradiating a laser from a rear surface of the glass substrate. | ||
| 申请公布号 | US8969128(B2) | 申请公布日期 | 2015.03.03 |
| 申请号 | US201213534245 | 申请日期 | 2012.06.27 |
| 申请人 | LG Display Co., Ltd. | 发明人 | Cho Yoon-dong;Park Jong-Hyun;Yoon Soo-Young;Lee Mi-Jung;Choi Jae-kyung |
| 分类号 | H01L51/40 | 主分类号 | H01L51/40 |
| 代理机构 | Morgan, Lewis & Bockius LLP | 代理人 | Morgan, Lewis & Bockius LLP |
| 主权项 | 1. A method of fabricating a thin film transistor substrate, comprising: forming a polymer layer directly on a glass substrate; forming a passivation layer on the polymer layer; forming a thin film transistor array on the passivation layer; and separating the glass substrate from the polymer layer by irradiating the polymer layer with a laser from a rear surface of the glass substrate. | ||
| 地址 | Seoul KR | ||