发明名称 OPC method with higher degree of freedom
摘要 The present disclosure relates to a method of performing an optical proximity correction (OPC) procedure that provides for a high degree of freedom by using an approximation design layer. In some embodiments, the method is performed by forming an integrated chip (IC) design having an original design layer with one or more original design shapes. An approximation design layer, which is different from the original design layer, is generated from the original design layer. The approximation design layer is a design layer that has been adjusted to remove features that may cause optical proximity correction (OPC) problems. An optical proximity correction (OPC) procedure is then performed on the approximation design layer. By performing the OPC procedure on the approximation design layer rather than on the original design layer, characteristics of the OPC procedure can be improved.
申请公布号 US8972909(B1) 申请公布日期 2015.03.03
申请号 US201314038943 申请日期 2013.09.27
申请人 Taiwan Semiconductor Manufacturing Co., Ltd. 发明人 Chang Chia-Cheng;Liang Jau-Shian;Lu Wen-Chen;Huang Chin-Min;Chih Ming-Hui;Tsay Cherng-Shyan;Lai Chien-Wen;Lin Hua-Tai
分类号 G06F17/50;G06F19/00;G03F1/00;G21K5/00 主分类号 G06F17/50
代理机构 Eschweiler & Associates, LLC 代理人 Eschweiler & Associates, LLC
主权项 1. A method of performing an optical proximity correction (OPC) procedure, comprising: forming an integrated chip (IC) design comprising a graphical representation of an integrated chip, wherein the IC design has an original design layer comprising one or more original design shapes; generating an approximation design layer from the original design layer, wherein the approximation design layer is different than the original design layer; and performing an optical proximity correction (OPC) procedure on the approximation design layer, by dissecting the approximation design layer into a plurality of separate edges and then selectively moving one or more of the separate edges in a direction perpendicular to the separate edge, to form an OPC'd layer that produces on-wafer shapes that correspond to the one or more original design shapes, wherein a computing device is used to form the IC design, to generate the approximation design layer, or to perform the OPC procedure on the approximation design layer.
地址 Hsin-Chu TW