Power transistor having segmented gate

摘要

There are disclosed herein various implementations of a transistor having a segmented gate region. Such a transistor may include at least one segmentation dielectric segment and two or more gate dielectric segments. The segmentation dielectric segment or segments are thicker than the gate dielectric segments, and is/are situated between the gate dielectric segments. The segmentation dielectric segment or segments cause an increase in the effective gate length so as to improve resistance to punch-through breakdown between a drain electrode and a source electrode of the transistor when the transistor is off.

主权项

1. A transistor comprising:
a drain electrode and a source electrode situated over a surface of a semiconductor body; a segmented gate region including at least one segmentation dielectric segment situated on said surface, said segmented gate region controlling conduction between said drain electrode and said source electrode through a conduction channel; said segmented gate region configured to improve resistance to punch-through breakdown between said drain electrode and said source electrode when said transistor is off.