| 发明名称 | Semiconductor device | ||
| 摘要 | A semiconductor device including a p or p+ doped portion and an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion. The device further includes at least one termination portion provided adjacent to the drift portion. The at least one termination portion comprises a Super Junction structure. | ||
| 申请公布号 | US8970016(B2) | 申请公布日期 | 2015.03.03 |
| 申请号 | US201213486614 | 申请日期 | 2012.06.01 |
| 申请人 | X-FAB Semiconductor Foundries AG | 发明人 | Antoniou Marina;Udrea Florin;Tee Elizabeth Kho Ching;Pilkington Steven John;Pal Deb Kumar;Hölke Alexander Dietrich |
| 分类号 | H01L29/02 | 主分类号 | H01L29/02 |
| 代理机构 | Thompson Hine L.L.P. | 代理人 | Thompson Hine L.L.P. |
| 主权项 | 1. A lateral semiconductor device comprising: a p or p+doped portion; an n or n+doped portion separated from the p or p+doped portion by a semiconductor drift portion; and at least one termination portion provided adjacent to the drift portion, wherein the at least one termination portion comprises a Super Junction structure, and wherein the Super Junction structure comprises alternating layers of n doped and p doped material, the alternating layers being formed on top of each other and the interfaces of the alternating layers being parallel to the surface of the semiconductor device. | ||
| 地址 | DE | ||