| 发明名称 | Solid-state imaging device | ||
| 摘要 | A solid-state imaging device includes a light-receiving portion, an optical filter layer, and quantum dots. The light receiving portion, where a photoelectric conversion is carried out, is formed in a semiconductor substrate. The optical filter layer is directly formed on or formed through another layer on the surface of the semiconductor substrate in which the light-receiving portion is formed. Quantum dots having substantially equal diameters are formed in the optical filter layer. The quantum dots have higher refractive indexes than the refractive index of the optical filter layer in which the quantum dots are embedded. | ||
| 申请公布号 | US8969987(B2) | 申请公布日期 | 2015.03.03 |
| 申请号 | US201113067918 | 申请日期 | 2011.07.07 |
| 申请人 | Sony Corporation | 发明人 | Rennie John |
| 分类号 | H01L31/0232;H01L27/146;G02B5/20;G02B5/22;H01L31/0352 | 主分类号 | H01L31/0232 |
| 代理机构 | Rader, Fishman & Grauer PLLC | 代理人 | Rader, Fishman & Grauer PLLC |
| 主权项 | 1. A solid-state imaging device, comprising: a light-receiving portion formed in a surface of a semiconductor substrate, the light-receiving portion being configured to carry out a photoelectric conversion; and an optical filter layer formed above the surface of the semiconductor substrate, the optical filter layer including quantum dots embedded in a material layer, wherein the quantum dots have an average diameter and a concentration and the material layer has a thickness such that the optical filter layer substantially filters all incident light having a wavelength below a predetermined wavelength, wherein the quantum dots have higher refractive indexes than the refractive index of the material layer, and wherein the predetermined wavelength is in the visible spectrum. | ||
| 地址 | Tokyo JP | ||